ICP RIE etch system

PlasmaPro 100 tool offers selective and high precision processing. Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility.

Technical specification

  • Vacuum loadlock for high throughput
  • Compatible with all wafer sizes up to 200 mm
  • RF 13,56 MHz and ICP 2 MHz plasma generator
  • Process temperature range: -30°C – 80°C
  • In-situ end point detection (laser inreferometry)
  • Wafer clamping and helium cooling, providing excellent temperature control
  • Process gases: Cl2, BCl3, Ar, O2


  • Etching of metals, dielectrics, semiconductors

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