Jeol JBX9300 electron beam lithography tool allows direct writing of patterns on the resist layer using gaussian beam

Technical Specifications

• Possible work with 50, 75, 100, 150, 200 mm wafers, and masks for 100 mm and 150 mm wafers
• Accelerating voltage 50 or 100 kV
• The minimum diameter of used beam spot used does not exceed 5 nm, and the minimum width of the obtained line is below 20 nm
• Maximum exposure field sizes without stitching is 1 mm2

Application

• Direct writing of patterns in nanoscale
• Masks production for photolithography
• Testing and prototyping of patterns with high flexibility, useful especially in the phase of research