Electron beam lithography

Possibility of fabrication of photomasks by electron beam lithography on our or provided substrates.


Jeol JBX9300 electron beam lithography tool allows direct writing of patterns on the resist layer using gaussian beam

Technical Specifications

  • Possible work with 50, 75, 100, 150, 200 mm wafers, and masks for 100 mm and 150 mm wafers
  • Accelerating voltage 50 or 100 kV
  • The minimum diameter of used beam spot used does not exceed 5 nm, and the minimum width of the obtained line is below 20 nm
  • Maximum exposure field sizes without stitching is 1 mm2


  • Direct writing of patterns in nanoscale
  • Masks production for photolithography
  • Testing and prototyping of patterns with high flexibility, useful especially in the phase of research

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